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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3486 DESCRIPTION With TO-3PN package High voltage ,high speed Wide area of safe operation APPLICATIONS For color TV display horizontal output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER CHA IN Collector current Collector-base voltage Collector-emitter voltage E SEM NG Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE 1500 800 7 6 16 UNIT V V V A A W ae ae Emitter-base voltage Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae 120 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=5mA ;RBE= IC=5mA ;IE=0 IE=5mA ;IC=0 IC=5A; IB=1.2A IC=5A; IB=1.2A VCB=800V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=1A ; VCE=10V 8 MIN 800 1500 7 2SC3486 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT TYP. MAX UNIT V V V 5.0 1.5 10 1 |I V V A mA Switching times tstg tf Fall time CHA IN Storage time E SEM NG OND IC TOR UC 3 3.0 0.3 MHz |I |I s s IC=5A;RL=40| IB1=1A; IB2=-2A 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3486 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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